High",energy (56 MeV) oxygen implantation in Si, GaAs, and InP

The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full wi.dth at half maximum -211m) non-Gaussian profile centered at Jlm in GaAs, 36 }lm in InP, and 46 {-lm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at 37 ,Lm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35 X 1015 cm 2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.